Tuning of the thermal stability and ovonic threshold switching properties of GeSe with metallic and non-metallic alloying elements

In order to make 3D crossbar memory architectures viable, selector elements with highly non-linear current–voltage characteristics are required. Ovonic Threshold Switching (OTS) is a phenomenon observed in amorphous chalcogenides, such as GeSe, that shows promise for application selectors. this paper, the impact of alloying metallic (Zr), metalloid (B, Sb), and non-metallic (C, N) function their concentration on thermal stability switching properties alloyed GeSe layers studied. case analysis, key parameter tracked crystallization temperature ( Tc) as-deposited films since OTS only occurs materials. Using simple metal–insulator–metal type test structure where bottom electrode scaled 6 μm, also compared. The pristine leakage current Ipris), first fire voltage VFF), threshold Vth) were determined using DC pulsed (AC) measurements. Results indicate C combination sufficiently high nitrogen incorporation can extend above 600 °C low dependence content. Among elements, strongly dependent concentration. general, larger concentrations needed obtain Tc 400 compared CN alloying. Electrical characterization indicates strong metallicity element small moderate required influence electrical properties.